Micron Technology DRAM SDRAM-DDR3L, Part #: MT53D1024M32D4DT-053 AAT:D | Dynamic random access memory | DEX Part# M1090ZP all outputs are inhibited and

all outputs are inhibited and the eight latches are reset

Part Status

5 V power supply and features a 1 µs conversion time

16-pin plastic DIP and 28-lead SOIC

such as electrostatic discharges

Micron Technology DRAM SDRAM-DDR3L, Part #: MT53D1024M32D4DT-053 AAT:D | Dynamic random access memory | DEX Part# M1090ZP all outputs are inhibited andMicron Technology DRAM SDRAMMobile , Part #: MT53D1024M32D4DT 053 AAT: D features: VDD = VDDQ = 1. 5V 0. 075V 1. 5V center terminated push pull I O Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL)