Micron Technology DRAM SDRAMMobile-, Part #: MT40A1G16KD-062E:E | Dynamic random access memory | DEX 1110 W Linearity: ‰¤ 3%

Linearity: ‰¤ 3%

000 hours at 105C @Solvent resistant type (see PRECAUTIONS AND GUIDELINES) @RoHS Compliant

MODULE 1513 GB172 3D

at >105°C to 125°C • 16 internal banks (x8): 4 groups of 4 banks each • 8 internal banks (x16): 2 groups of 4 banks each • 8n-bit prefetch architecture • Programmable data strobe preambles • Data strobe preamble training • Command/Address latency (CAL) • Multipurpose register READ and WRITE capability • Write leveling • Self refresh mode • Low-power auto self refresh (LPASR) • Temperature controlled refresh (TCR) • Fine granularity refresh • Self refresh abort • Maximum power saving • Output driver calibration • Nominal

Xiilnx FPGA Part #XCKU5P-2SFVB784E

Micron Technology DRAM SDRAMMobile-, Part #: MT40A1G16KD-062E:E | Dynamic random access memory | DEX 1110 W Linearity: ‰¤ 3%Micron Technology DRAM SDRAM DDR4, Part #: MT40A1G16KD 062E: E features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V, 125mV, +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O TC maximum up to 95C 64ms, 8192 cycle refresh up to 85C 32ms, 8192 cycle refresh at >85C to 95C 16 internal banks (x4, x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe