Micron Technology DRAM SDRAM-DDR2, Part #: MT40A1G8SA-062E:R TR | Dynamic random access memory | DEX 37765 AEAA - Model GE1

AEAA - Model GE1

Battery-powered systems

LNV:5SB0Z88655

CR1:IN1102

ISO7816 interface

Micron Technology DRAM SDRAM-DDR2, Part #: MT40A1G8SA-062E:R TR | Dynamic random access memory | DEX 37765 AEAA - Model GE1Micron Technology DRAM SDRAM DDR4, Part #: MT40A1G8SA 062E: R TR features: VDD = VDDQ = 1. 2V + 60mv VPP = 2. 5V, 125mV, + 250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 16 internal banks (x4, x8): 4 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles Data strobe preamble training Command Address latency (CAL) Multipurpose register