Micron Technology DRAM SDRAM-DDR3L, Part #: MT53E256M32D2DS-046 AUT:B | Dynamic random access memory | DEX Micron Technology 2V pseudo open-drain I/O •

2V pseudo open-drain I/O • Refresh time of 8192-cycle at TC temperature range: – 64ms at -40°C to 85°C – 32ms at >85°C to 95°C – 16ms at >95°C to 105°C • 16 internal banks (x4

Peripherals off • Ultra Low 50nA Input Leakage • Run mode Currents Down to 11 μA Typical • Idle mode Currents Down to 2

MIL:MT40A512M16LY-062E E

BRM:BCM5461A1KQMG

LNV:5CB0Z69149

Micron Technology DRAM SDRAM-DDR3L, Part #: MT53E256M32D2DS-046 AUT:B | Dynamic random access memory | DEX Micron Technology 2V pseudo open-drain I/O •Micron Technology DRAM SDRAMMobile , Part #: MT53E256M32D2DS 046 AUT: B features: Ultra low voltage core and I O power supplies VDD1 = 1. 701. 95V; 1. 80V nominal VDD2 = 1. 061. 17V; 1. 10V nominal VDDQ = 1. 061. 17V; 1. 10V nominal or Low VDDQ = 0. 570. 65V; 0. 60V nominal Frequency range 213310 MHz (data rate range: 426620 Mb s pin) 16n prefetch DDR architecture 8 internal banks per channel for concurrent operation Single data rate CMD ADR entry